Over-voltage protection of gallium nitride semiconductor devices

ABSTRACT

A monolithically integrated semiconductor assembly is presented. The semiconductor assembly includes a substrate including silicon carbide (SiC), and gallium nitride (GaN) semiconductor device is fabricated on the substrate. The semiconductor assembly further includes at least one transient voltage suppressor (TVS) structure fabricated in or on the substrate, wherein the TVS structure is in electrical contact with the GaN semiconductor device. The TVS structure is configured to operate in a punch-through mode, an avalanche mode, or combinations thereof, when an applied voltage across the GaN semiconductor device is greater than a threshold voltage. Methods of making a monolithically integrated semiconductor assembly are also presented.

BACKGROUND OF THE INVENTION

The invention relates generally to over-voltage protection of galliumnitride (GaN)-based semiconductor devices, and, more particularly, toover-voltage protection of GaN-based transistors.

GaN semiconductor devices, such as, field effect transistors (FETs), inparticular, high electron mobility field effect transistors (HEMTs) havefound applications across industries, such as, medical, defense,aviation etc. However, GaN devices are susceptible to electricaloverstresses due to transient events in the circuit and electro-staticdischarge (ESD). The electrical stresses can induce avalanching in thedevice that can lead to device degradation and eventually catastrophicfailure. While GaN switches have several advantages, this safetyconsideration (due to a lack of sustainable avalanching) has precludedtheir widespread deployment in high speed switching and power electronicsystems.

GaN-based devices, in particular transistors, have been unable todemonstrate sustained avalanche due to defects in the crystal. Defectsarising from the growth of GaN materials on foreign substrates such assilicon, sapphire, silicon carbide (SiC) or other materials are observedin high densities (greater than 1000 per square centimeter), leading tothe GaN material's inability to maintain a stable avalanche condition,leading the GaN material to degrade physically, and irreversibly.

A transient voltage suppressor (TVS) device, more popularly known as asurge protector, is an electronic component that is utilized forprotecting sensitive electronics from damage such as voltage spikes. Atransient or excess voltage (or current) is a momentary or fleetingsurge in the voltage (or current) that may harm the sensitive electroniccircuitry.

Silicon based TVS devices have conventionally been used for protectingsensitive electronic components from current or voltage transientscaused by lightning strikes or electromagnetic interferences. However,silicon-based TVS devices are more prone to generate high leakagecurrents as the temperatures increase. Particularly, when the ambienttemperature reaches unacceptably high values, for example 225 degreesCelsius, silicon based TVS devices may become unsuitable for operationdue to excessive leakage currents.

Accordingly, there is a need for overvoltage protection of GaN devicesto preclude avalanche conditions. Further, it may be desirable toprovide overvoltage protection of GaN devices during high temperatureoperation (greater than 150 degrees Celsius).

BRIEF DESCRIPTION OF THE INVENTION

One aspect of the present technique is directed to a monolithicallyintegrated semiconductor assembly. The semiconductor assembly includes asubstrate comprising SiC, and a GaN semiconductor device fabricated onthe substrate. The semiconductor assembly further includes at least onetransient voltage suppressor (TVS) structure fabricated in or on thesubstrate, where the TVS structure is in electrical contact with the GaNsemiconductor device. The TVS structure is configured to operate in apunch-through mode, an avalanche mode, or combinations thereof, when anapplied voltage across the GaN semiconductor device is greater than athreshold voltage.

Another aspect of the present technique is directed to a monolithicallyintegrated semiconductor assembly. The semiconductor assembly includes asubstrate comprising SiC, and a GaN semiconductor device fabricated onthe substrate. The semiconductor assembly further comprises at least oneTVS structure comprising SiC fabricated in or on the substrate. The TVSstructure is in electrical contact with the GaN semiconductor device,and the TVS structure is configured to operate in a punch-through mode,when an applied voltage across the GaN semiconductor device is greaterthan a threshold voltage.

Another aspect of the present technique is directed to a method ofmaking a monolithically integrated semiconductor assembly. The methodincludes (a) providing a substrate comprising SiC; (b) fabricating a GaNsemiconductor device on the substrate; (c) fabricating at least one TVSin or on the substrate; and (d) electrically coupling the TVS structurewith the GaN semiconductor device. The TVS structure is configured tooperate in a punch-through mode, an avalanche mode, or combinationsthereof, when an applied voltage across the GaN semiconductor device isgreater than a threshold voltage.

DRAWINGS

These and other features, aspects, and advantages of the presentinvention will become better understood when the following detaileddescription is read with reference to the accompanying drawings, inwhich like characters represent like parts throughout the drawings,wherein:

FIG. 1 is a cross-sectional view of a semiconductor assembly, inaccordance with certain embodiments of the invention.

FIG. 2 is a cross-sectional view of a semiconductor assembly, inaccordance with certain embodiments of the invention.

FIG. 3 is a cross-sectional view of a semiconductor assembly, inaccordance with certain embodiments of the invention.

FIG. 4 is a cross-sectional view of a semiconductor assembly, inaccordance with certain embodiments of the invention.

FIG. 5 is a cross-sectional view of a semiconductor assembly, inaccordance with certain embodiments of the invention.

FIG. 6 is a cross-sectional view of a semiconductor assembly, inaccordance with certain embodiments of the invention.

FIG. 7 is a cross-sectional view of a semiconductor assembly, inaccordance with certain embodiments of the invention.

FIG. 8 is a cross-sectional view of a semiconductor assembly, inaccordance with certain embodiments of the invention.

DETAILED DESCRIPTION

As discussed in detail below, certain embodiments of the inventioninclude monolithically integrated semiconductor assemblies including aGaN semiconductor device and a TVS structure.

Approximating language, as used herein throughout the specification andclaims, may be applied to modify any quantitative representation thatcould permissibly vary without resulting in a change in the basicfunction to which it is related. Accordingly, a value modified by a termor terms, such as “about”, and “substantially” is not to be limited tothe precise value specified. In some instances, the approximatinglanguage may correspond to the precision of an instrument for measuringthe value. Here and throughout the specification and claims, rangelimitations may be combined and/or interchanged, such ranges areidentified and include all the sub-ranges contained therein unlesscontext or language indicates otherwise.

In the following specification and the claims, the singular forms “a”,“an” and “the” include plural referents unless the context clearlydictates otherwise. As used herein, the term “or” is not meant to beexclusive and refers to at least one of the referenced components (forexample, a region) being present and includes instances in which acombination of the referenced components may be present, unless thecontext clearly dictates otherwise.

As used herein, the term “layer” refers to a material disposed on atleast a portion of an underlying surface in a continuous ordiscontinuous manner. Further, the term “layer” does not necessarilymean a uniform thickness of the disposed material, and the disposedmaterial may have a uniform or a variable thickness. Furthermore, theterm “a layer” as used herein refers to a single layer or a plurality oflayers, unless the context clearly dictates otherwise.

As used herein, the term “disposed on” refers to layers disposeddirectly in contact with each other or indirectly by having interveninglayers there between, unless otherwise specifically indicated. The term“adjacent” as used herein means that the two layers are disposedcontiguously and are in direct contact with each other.

In the present disclosure, when a layer/device is being described as“on” another layer or substrate, it is to be understood that thelayers/devices can either be directly contacting each other or have one(or more) layer or feature between the layers and devices. Further, theterm “on” describes the relative position of the layers/devices to eachother and does not necessarily mean “on top of” since the relativeposition above or below depends upon the orientation of the device tothe viewer. Moreover, the use of “top,” “bottom,” “above,” “below,” andvariations of these terms is made for convenience, and does not requireany particular orientation of the components unless otherwise stated.

As described in detail later, a monolithically integrated semiconductorassembly is presented. The term “monolithically integrated” as usedherein refers to a semiconductor assembly having all componentsmanufactured/fabricated into or on top of a single substrate. FIGS. 1and 2 schematically represent a monolithically integrated semiconductorassembly 100, in accordance with some embodiments of the invention. Asillustrated in FIGS. 1 and 2, the semiconductor assembly 100 includes asubstrate 110 and a gallium nitride (GaN) semiconductor device 120 isfabricated on the substrate 110. The semiconductor assembly furtherincludes at least one transient voltage suppressor (TVS) structure 130.The TVS structure may be fabricated in the substrate, as illustrated inFIG. 1, or, alternatively, the TVS structure may be fabricated on thesubstrate, as illustrated in FIG. 2. The TVS structure 130 is inelectrical contact 140 with the GaN semiconductor device 120, asindicated in FIGS. 1 and 2.

For the sake of brevity, the terms “gallium nitride semiconductordevice” and “GaN device” are used herein interchangeably. Further, theterms “transient voltage suppressor structure” and “TVS structure” areused herein interchangeably.

For particular configurations, the substrate comprises SiC. As notedearlier, embodiments of the invention provide for transient voltageprotection of GaN devices at substantially high temperatures, forexample, temperatures greater than about 150 degrees Celsius, and moreparticularly for temperatures greater than about 200 degrees Celsius.Without being bound by any theory, it is believed that a SiC substrateallows for high temperature operation of the GaN device (greater than150 degrees Celsius).

The semiconductor assembly may include any suitable GaN device 120 basedon the end-use application of the assembly. For particularconfigurations, the GaN device 120 includes a GaN transistor, a GaNdiode, or combinations thereof. Suitable non-limiting examples of a GaNtransistor include a field effect transistor (FET), such as, forexample, a high electron mobility transistor (HEMT), a junction gatefield effect transistor (JFET), a metal-oxide-semiconductor field-effecttransistor (MOSFET), or combinations thereof. One or more of the GaNdevices 120 may be fabricated on the substrate 110 in a lateralconfiguration or a vertical configuration. For particularconfigurations, the GaN device 120 is a HEMT.

Referring now to FIG. 3, a schematic view of an exemplary GaN HEMTdevice 120 is illustrated. The exemplary HEMT device 120, as illustratedin FIG. 3, includes a buffer layer 121 (optional) disposed on the SiCsubstrate 110. For particular configurations, one or more interveninglayers (not shown) may be disposed between the buffer layer 121 and theSiC substrate. For the configuration shown in FIG. 3, a GaN layer 122 isdisposed on the buffer layer 121, and an aluminum gallium nitride(AlGaN) layer is disposed on the GaN layer 122. For the illustratedarrangement, the HEMT device 120 further includes a gate terminal 125, asource terminal 126, and a drain 127 terminal, as indicated in FIG. 3.For particular configurations, the GaN layer 122 and the AlGaN layer 123are intrinsic-type (i-type) and an additional p-type AlGaN layer (notshown) may be disposed between the AlGaN layer 123 and the gate terminal126. A capping layer 124 (optional) may be further interposed betweenthe source terminal 125/drain terminal 127 and the barrier layer 123.

The GaN HEMT device may be fabricated on the SiC substrate 110 bysequentially disposing or forming one or more of the aforementionedlayers. The terms “fabricated on” or “fabricating on” as used hereinmeans that the GaN device 120/TVS structure 130 may be fabricateddirectly in contact with at least a portion of the substrate 110, or,alternatively, one or more layers/features may be interposed between theGaN devices 120/TVS structure 130 and the substrate 110. For particularconfigurations, the GaN device 120 may be fabricated on one or moreintervening layers or features, which are further disposed on at least aportion of the substrate 110. For example, in some embodiments, the GaNdevice 120 may be fabricated on at least a portion of a TVS structure130 disposed on the substrate, as illustrated in FIG. 8 (described indetail later).

As noted earlier, a transient voltage suppressor (TVS) structure, alsoreferred to as a surge protector, is an electronic component that isutilized for protecting sensitive electronics from damage such asvoltage spikes. A transient or excess voltage (or current) is amomentary or fleeting surge in the voltage (or current) that may harmsensitive electronic circuitry. Hereinafter, the terms “voltage surge”and “transient voltage” may be used interchangeably to indicate anunexpected or excessive increase in voltage compared to an averagevoltage across the system. Similarly, the terms “current surge” and“transient current” may be used interchangeably to indicate anunexpected increase in the current compared to an average currenttransmitted through the system. Hereinafter, the term “transients” maybe used to generically refer to transient voltage or transient current.

In general, a transient voltage suppressor device operates on twoprinciples: attenuating excess current or transient current therebylimiting residual current, or diverting a transient or an excess currentfrom the sensitive electronic components. Attenuating a transientcurrent is typically achieved by ensuring that the transient currentdoes not reach or impact the sensitive electronic components, often byusing filters inserted in series with the electronic components.Diverting a transient current is typically achieved by using a voltageclamping device or a crowbar type device. In operation, the voltageclamping device has variable impedance that varies in response to thecurrent flowing through the voltage clamping device.

For particular configurations, the TVS structure 130 may be a clampingdevice. More particularly, the TVS structure 130 may be configured tooperate in a punch-through mode, an avalanche mode, or combinationsthereof, when an applied voltage across the GaN device 120 is greaterthan a threshold voltage.

The term “punch-through mode” as used herein means that TVS structureoperates using “punch-through,” or also known as, “reach-through”physics, such that, as the voltage across the TVS structure isincreased, a depletion region extends across the structure, and largeamounts of current are able to flow through the TVS structure. The TVSstructure is further able to maintain this condition with minimal changein the voltage across it.

The term “avalanche mode” as used herein refers to the process in whichsemiconductors sustain an electrical field internal to a region orregions of the device, whereby the process of ionization starts tooccur, leading to carrier multiplication. The TVS structures maymaintain this condition if so desired, however, this typically involvesa non-linear increase in current, above the turn-on voltage of thedevice, and may see large increases in current and therefore heat in thedevice in these conditions. The term threshold voltage as used hereinrefers to the voltage at which the TVS device will effectively turn on,or begin to conduct current.

The TVS structure 130 may comprise silicon carbide, gallium nitride,diamond, aluminum nitride, boron nitride, zinc oxide, gallium oxide, orcombinations thereof. For particular configurations, where the TVSstructure 130 is fabricated in the SiC substrate, the TVS structure maycomprise the same material as the substrate (SiC), as illustrated inFIGS. 3-6. In some such instances, the GaN device 120 may be fabricatedon the SiC substrate 110 from regrown epitaxy.

For other configurations, the TVS structure may be fabricated on thesubstrate, as illustrated in FIGS. 7 and 8. In some such arrangements,the TVS structure 130 may comprise silicon carbide, gallium nitride, orcombinations thereof. In such instances, the TVS structure may befabricated from regrown epitaxy of the same material as the substrate(i.e., SiC, FIG. 8) or from the regrown epitaxy of GaN (FIG. 7).

The TVS structure 130 may be configured laterally, or, alternatively,vertically in the semiconductor assembly 100. FIGS. 3-7 illustrateexemplary configurations in which the TVS structure 130 is configuredlaterally. FIG. 8 illustrates an exemplary configuration in which theTVS structure 130 is configured vertically.

Referring again to FIGS. 3-8, an exemplary TVS structure 130 includes afirst semiconductor region 131 having a first conductivity type, and asecond semiconductor region 132 having a second conductivity type and inelectrical contact with the first semiconductor region. The TVSstructure 130 further includes a third semiconductor region 133 having afirst conductivity type, and in electrical contact with the secondsemiconductor region 132.

For particular configurations, the first conductivity is p-type and thesecond conductivity is n-type. In such instances, the TVS structurecomprises a p-n-p device. For other arrangements, the first conductivityis n-type and the second conductivity is n-type. In such instances, theTVS structure comprises an n-p-n device.

It should be noted herein that the conductivity of a semiconductormaterial is indicative of the majority and minority charge carriers inthe semiconductor material. For example, an n-type semiconductormaterial includes “negative charge carriers” as majority charge carriersand “positive charge carriers” as minority charge carriers. For example,a p-type semiconductor material includes “negative charge carriers” asminority charge carriers and “positive charge carriers” as majoritycharge carriers. As is understood by one of ordinary skilled in the art,a “negative charge carrier” refers to electrons whereas a “positivecharge carriers” refers to holes.

For particular configurations, the first conductivity type is n+-typeand the second conductivity type is p−-type. In an n-p-n type device,when the device is subjected to a potential across the two n-typelayers, a depletion layer is formed (mostly) in the p-type layer becauseits doping is much lower compared to the two n-type layers. For example,one to five orders of magnitude lower, or one-tenth to oneten-thousandth of the dopant concentration of the n-type layers. For afurther example, if the doping concentration in the n-type layers isabout 10¹⁸/cm³, the doping concentration in the p-type layers would beabout 10¹⁵/cm³.

As the voltage across the device is increased, the depletion regionextends all across the p-type layer and touches the n-type layer on theother side. This leads to the mode known as “punch-through” as discussedearlier, and a large amount of current begins flowing in the device. Thedevice is able to maintain this condition with minimal change in thevoltage across it. A similar explanation describes the operation modewhen the polarity of the layers is changed to p-n-p. The avalanchestructure may be similar to the punch through structure illustrated inFIGS. 3-8. By adjusting the thickness and doping of the secondsemiconductor region 132, the TVS structure 130 may be made to work inthe avalanche mode instead of punch through mode.

As noted earlier, the TVS structure 130 is in electrical contact 140with the GaN device 120. For particular configurations, the TVSstructure 130 is in electrical contact with the GaN device 120 via agate-source terminal, a drain-source terminal, a gate-drain terminal, orcombinations thereof. FIG. 4 illustrates an arrangement in which thefirst semiconductor region 131 is in electrical contact 140 with asource terminal 126 of the GaN device 130, and the third semiconductorregion 133 is in electrical contact with a gate terminal 125 of the GaNdevice 120. FIG. 5 illustrates an alternate arrangement in which thefirst semiconductor region 131 is in electrical contact 140 with asource terminal 126 of the GaN device 130, and the third semiconductorregion 133 is in electrical contact with a drain terminal 127 of the GaNdevice 120.

Further, in some configurations, the semiconductor assembly may includemultiple TVS structures 130. FIG. 6 illustrates an arrangement includingtwo TVS structures 130. In such instances, the two TVS structures may beelectrically connected to the same terminals the GaN device 120 or todifferent terminals. FIG. 6 illustrates a configuration in which a firstTVS structure 130 is electrically connected to the source terminal 126and gate terminal 125 of the GaN device 120. The second TVS structure iselectrically connected to the source terminal 126 and the drain terminal127. For particular configurations, the GaN device 120 may be surroundedby a series of rings, including the TVS structure 130, to accommodatelarger currents.

For particular configurations, the first semiconductor region 131, thesecond semiconductor region 132, and the third semiconductor region 133are formed in the SiC substrate 110, as illustrated in FIGS. 4-6. Insuch instances, the TVS structure 130 comprises SiC. In such instances,the first semiconductor region 131, the second semiconductor region 132,and the third semiconductor region 133 may be formed in the SiCsubstrate 110 using any suitable technique, for example, ionimplantation of n-type dopants or p-type dopants. Suitable non-limitingexamples of p-type dopants include boron, aluminum, gallium, magnesium,carbon, calcium, or combinations thereof. Suitable non-limiting examplesof n-type dopants include nitrogen, phosphorus, arsenic, antimony, orcombinations thereof.

FIG. 7 illustrates an arrangement, in which the TVS structure 130 isfabricated on the SiC substrate 110. In this exemplary embodiment, theTVS structure 130 comprises GaN. In FIG. 7, the TVS structure 130further includes a GaN layer 134 disposed on at least a portion of theSiC substrate 110. The first semiconductor region 131, the secondsemiconductor region 132, and the third semiconductor region 133 areformed in the GaN layer 134, as illustrated in FIG. 7. In suchinstances, the first semiconductor region 131, the second semiconductorregion 132, and the third semiconductor region 133 may be formed in theGaN layer 134 using any suitable technique, for example, ionimplantation of n-type dopants or p-type dopants.

For other configurations, the first semiconductor region 131, the secondsemiconductor region 132, and the third semiconductor region 133 areepitaxially grown on the SiC substrate 110, as illustrated in FIG. 8,which illustrates a vertical configuration of the TVS structure 130. Inan exemplary arrangement, the semiconductor assembly 100 includes a mesastructure that includes a SiC substrate (e.g., having an n+-typeconductivity). The semiconductor assembly 100 further includes anepitaxially grown first semiconductor region 131 (e.g., having ann+-type conductivity), an epitaxially grown second semiconductor region132 (e.g., having an p−-type conductivity) in electrical contact withthe first semiconductor region 131, and an epitaxially grown thirdsemiconductor region 133 (e.g., having an n+-type conductivity) inelectrical contact with the second semiconductor region 132.

In the exemplary arrangement, the second semiconductor region 132 isrelatively lightly doped relative to the first semiconductor region 131and the third semiconductor region 133. For particular configurations, auniform doping concentration of substrate 110 and regions, 131, 132, and133 improves a uniformity of the electric field distribution in thedepletion region, thereby improving the breakdown voltagecharacteristic.

Moreover, for particular configurations, as illustrated in FIG. 8, theTVS structure may have a beveled sidewall. The beveled sidewall may beangled about five degrees to about eighty degrees with respect to aninterface between adjacent contacting layers to reduce the maximumelectric field profile at a surface of the assembly.

For particular configurations, the semiconductor assembly 100 isconfigured to operate at temperatures greater than about 150 degreesCelsius, more particularly at a temperature greater than about 200degrees Celsius, and still more particularly at a temperature greaterthan about 250 degrees Celsius. Further, the semiconductor assembly 100may be configured to have a leakage current of less than about 1 μA/cm²at 90% of breakdown voltage, and more particularly less than about 0.5μA/cm² at 90% of breakdown voltage.

The semiconductor assembly 100 may be further configured to have anoperation current density greater than about 150 A/cm², and moreparticularly greater than about 200 A/cm². In some embodiments, thesemiconductor assembly 100 is configured to exhibit punch throughcharacteristics between about 5 Volts to about 75 Volts, and moreparticularly from about 75 Volts to about 200 Volts. The TVS structure130 may be used in concert with SiC or GaN integrated circuits, in someembodiments.

A method of making a monolithically integrated semiconductor assembly isalso presented. Referring again to FIGS. 1 and 2, the method includesthe steps of (c) providing a substrate 110 comprising silicon carbide(SiC); (b) fabricating a gallium nitride (GaN) semiconductor device 120on the substrate 110; (c) fabricating at least one transient voltagesuppressor (TVS) 130 in or on the substrate 110; and (d) electricallycoupling the TVS structure 130 with the GaN semiconductor device 120. Asnoted earlier, the TVS structure 130 is configured to operate in apunch-through mode, an avalanche mode, or combinations thereof, when anapplied voltage across the GaN semiconductor device 120 is greater thana threshold voltage. It should be noted that the step (b) may beeffected before step (c) in some embodiments, or, alternately, step (c)may be performed before (b) in some other embodiments.

The GaN device 120 may be fabricated on the SiC substrate 110 byepitaxially growing one or more layers of the GaN device 120. Forexample, referring again to FIG. 3, in some embodiments, the GaN device120 may be fabricated by sequentially disposing or forming one or moreof the layers 121, 122, and 123, and forming the source, gate, and drainterminals 125, 126, and 127.

For particular configurations, the method further includes fabricatingthe TVS structure 130 by forming a first semiconductor region 131 of afirst conductivity type, as illustrated in FIGS. 4-8. The method furtherincludes forming a second semiconductor region 133 of a secondconductivity type, and in electrical contact with the firstsemiconductor region 131; and forming a third semiconductor region 133of a first conductivity type, and in electrical contact with the secondsemiconductor region 132, as illustrated in FIGS. 4-8.

For particular configurations, the first conductivity is p-type and thesecond conductivity is n-type. In such instances, the TVS structureincludes a p-n-p device. In some other embodiments, the firstconductivity is n-type and the second conductivity is n-type. In suchinstances, the TVS structure includes an n-p-n device. For particularconfigurations, the first conductivity type is n+-type and the secondconductivity type is p−-type.

With continued reference to FIGS. 4-6, for particular processes, thestep of forming the TVS structure may include forming the firstsemiconductor region 131, the second semiconductor region 132, and thethird semiconductor region 133 in the SiC substrate 130. In suchinstances, the TVS structure 130 may be formed using any suitabletechnique, such as, for example, ion implantation.

FIG. 7 illustrates another particular process, in which the step offorming the TVS structure 130 includes disposing a GaN layer 134 on atleast a portion of the SiC substrate 110. The method further includesforming the first semiconductor region 131, the second semiconductorregion 132, and the third semiconductor region 133 in the GaN layer 134to form the TVS structure 130, as illustrated in FIG. 7. In suchinstances, the TVS structure 130 may be formed using any suitabletechnique, such as, for example, ion implantation.

For other particular processes, as illustrated in FIG. 8, the step offorming the TVS structure 130 may include epitaxially growing the firstsemiconductor region 131, the second semiconductor region 132, and thethird semiconductor region 133 on the SiC substrate 110. As illustratedin FIG. 8, in such processes, the GaN device 120 is fabricated on theTVS structure 130 after the step of TVS fabrication on the SiC substrate110.

The method may further include electrically coupling 140 the TVSstructure 130 with a GaN semiconductor device 120 via a gate-sourceterminal, a drain-source terminal, a gate-drain terminal, orcombinations thereof, as illustrated in FIGS. 4-7.

The above-described semiconductor assemblies provide a cost-effectiveand reliable means for overvoltage protection of GaN devices to precludeavalanche conditions. More specifically, the semiconductor assembliesdescribed herein provide for overvoltage protection of GaN devicesduring high temperature operation (greater than 150 degrees Celsius).

The appended claims are intended to claim the invention as broadly as ithas been conceived and the examples herein presented are illustrative ofselected embodiments from a manifold of all possible embodiments.Accordingly, it is the Applicants' intention that the appended claimsare not to be limited by the choice of examples utilized to illustratefeatures of the present invention. As used in the claims, the word“comprises” and its grammatical variants logically also subtend andinclude phrases of varying and differing extent such as for example, butnot limited thereto, “consisting essentially of” and “consisting of.”Where necessary, ranges have been supplied; those ranges are inclusiveof all sub-ranges there between. It is to be expected that variations inthese ranges will suggest themselves to a practitioner having ordinaryskill in the art and where not already dedicated to the public, thosevariations should where possible be construed to be covered by theappended claims. It is also anticipated that advances in science andtechnology will make equivalents and substitutions possible that are notnow contemplated by reason of the imprecision of language and thesevariations should also be construed where possible to be covered by theappended claims.

The invention claimed is:
 1. A monolithically integrated semiconductor assembly, comprising: a substrate comprising silicon carbide (SiC); a gallium nitride (GaN) semiconductor device fabricated on the substrate, wherein the GaN semiconductor device comprises a high electron mobility transistor (HEMT), a junction gate field effect transistor (JFET), or a metal-oxide-semiconductor field-effect transistor (MOSFET); and in addition to the GaN semiconductor device, at least one transient voltage suppressor (TVS) structure fabricated in or on the substrate, comprising: a first semiconductor region having a first conductivity type; a second semiconductor region having a second conductivity type, and in electrical contact with the first semiconductor region; and a third semiconductor region having a first conductivity type, and in electrical contact with the second semiconductor region, such that the TVS structure is configured to operate in a punch-through mode when an applied voltage across the GaN semiconductor device is greater than a threshold voltage.
 2. The monolithically integrated semiconductor assembly of claim 1, wherein the TVS structure comprises at least one of silicon carbide, gallium nitride, diamond, aluminum nitride, boron nitride, or combinations thereof.
 3. The monolithically integrated semiconductor assembly of claim 1, wherein the TVS structure is configured laterally.
 4. The monolithically integrated semiconductor assembly of claim 1, wherein the TVS structure is configured vertically.
 5. The monolithically integrated semiconductor assembly of claim 1, wherein the first conductivity type is n+-type and the second conductivity type is p-type.
 6. The monolithically integrated semiconductor assembly of claim 1, wherein the first semiconductor region, the second semiconductor region, and the third semiconductor region are formed in the SiC substrate.
 7. The monolithically integrated semiconductor assembly of claim 1, wherein the first semiconductor region, the second semiconductor region, and the third semiconductor region are epitaxially grown on the SiC substrate.
 8. The monolithically integrated semiconductor assembly of claim 1, wherein the TVS structure further comprises a GaN layer disposed on at least a portion of the SiC substrate, and wherein the first semiconductor region, the second semiconductor region, and the third semiconductor region are formed in the GaN layer.
 9. The monolithically integrated semiconductor assembly of claim 1, wherein the TVS structure is in electrical contact with the GaN semiconductor device via a gate-source terminal, a drain-source terminal, a gate-drain terminal, or combinations thereof.
 10. A monolithically integrated semiconductor assembly, comprising: a substrate comprising silicon carbide (SiC); a gallium nitride (GaN) semiconductor device fabricated on the substrate, wherein the GaN semiconductor device comprises a high electron mobility transistor (HEMT); and in addition to the GaN semiconductor device, at least one transient voltage suppressor (TVS) structure comprising silicon carbide (SiC) fabricated in or on the substrate, comprising: a first semiconductor region having a first conductivity type; a second semiconductor region having a second conductivity type, and in electrical contact with the first semiconductor region; and a third semiconductor region having a first conductivity type, and in electrical contact with the second semiconductor region; wherein the TVS structure is in electrical contact with the GaN semiconductor device, such that the TVS structure is configured to operate in a punch-through mode when an applied voltage across the GaN semiconductor device is greater than a threshold voltage.
 11. The monolithically integrated semiconductor assembly of claim 10, wherein the assembly is configured to operate at temperatures greater than 150 degree Celsius.
 12. The monolithically integrated semiconductor assembly of claim 10, wherein the assembly is configured to have a leakage current of less than about 1 μA/cm² at 90% of a breakdown voltage.
 13. The monolithically integrated semiconductor assembly of claim 10, wherein the assembly is configured to have an operation current density greater than about 150 A/cm².
 14. A method of making a monolithically integrated semiconductor assembly comprising: (a) providing a substrate comprising silicon carbide (SiC); (b) fabricating a gallium nitride (GaN) semiconductor device on the substrate, wherein the GaN semiconductor device comprises a high electron mobility transistor (HEMT), a junction gate field effect transistor (JFET), or a metal-oxide-semiconductor field-effect transistor (MOSFET); (c) in addition to the GaN semiconductor device, fabricating at least one transient voltage suppressor (TVS) in or on the substrate, the at least one TVS comprising: a first semiconductor region having a first conductivity type; a second semiconductor region having a second conductivity type, and in electrical contact with the first semiconductor region; and a third semiconductor region having a first conductivity type, and in electrical contact with the second semiconductor region; and (d) electrically coupling the TVS structure with the GaN semiconductor device, wherein the TVS structure is configured to operate in a punch-through mode when an applied voltage across the GaN semiconductor device is greater than a threshold voltage.
 15. The method of claim 14, wherein the first conductivity type is n+-type and the second conductivity type is p-type.
 16. The method of claim 14, wherein the step (c) comprises forming the first semiconductor region, the second semiconductor region, and the third semiconductor region in the SiC substrate by ion implantation.
 17. The method of claim 14, wherein the step (c) comprises epitaxially growing the first semiconductor region, the second semiconductor region, and the third semiconductor region on the SiC substrate.
 18. The method of claim 14, further comprising disposing a GaN layer on at least a portion of the SiC substrate, and forming the first semiconductor region, the second semiconductor region, and the third semiconductor region in the GaN layer.
 19. The method of claim 14, wherein the step (d) comprises electrically coupling the TVS structure with the GaN semiconductor device via a gate-source terminal, a drain-source terminal, a gate-drain terminal, or combinations thereof.
 20. The monolithically integrated semiconductor assembly of claim 1, wherein the first semiconductor region and the third semiconductor region in the TVS structure are in electrical contact with the GaN semiconductor device.
 21. The monolithically integrated semiconductor assembly of claim 20, wherein the first semiconductor region and the third semiconductor region in the TVS structure are in electrical contact with the GaN semiconductor device via a gate-source terminal, a drain-source terminal, or combinations thereof.
 22. The monolithically integrated semiconductor assembly of claim 20, wherein the first semiconductor region is in electrical contact with a source terminal of the GaN semiconductor device, and the third semiconductor region is in electrical contact with a gate terminal or a drain terminal of the GaN semiconductor device.
 23. The monolithically integrated semiconductor assembly of claim 1, further comprising a second TVS structure. 